| 品牌 | NCE/新洁能 | 批号 | 2025++ |
| 封装 | TO220F | 仓库 |
- 全新原厂原装正品假一赔万实单可谈
Description The NCE6050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =50A RDS(ON) <20m? @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 50 A Drain Current-Continuous(TC=100℃) ID (100℃) 35.4 A Pulsed Drain Current IDM 200 A Maximum Power Dissipation PD 85 W Derating factor 0.57 W/℃ Single pulse avalanche energy (Note 5) EAS 300 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃
Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.4 1.9 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A - 14 20 m? Forward Transconductance gFS VDS=5V,ID=20A 18 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 2050 - PF Output Capacitance Coss - 158 - PF Reverse Transfer Capacitance Crss VDS=30V,VGS=0V, F=1.0MHz - 120 - PF