深圳市华钻电子有限公司

Features ? Enhancement mode ? VitoMOS? Ⅱ Technology ? Fast Switching and High efficiency ? 100% Avalanche test

V(BR)DSS Drain-Source breakdown voltage 40 V VGS Gate-Source voltage ±20 V IS Diode continuous forward current TC = 25°C 54 A ID Continuous drain current @VGS=10V (Silicon limited) TC = 25°C 54 A ID Continuous drain current @VGS=10V (Silicon limited) TC = 100°C 34 A ID Continuous drain current @VGS=10V (Wire bond limited) TC = 25°C 36 A IDM Pulse drain current tested ① TC = 25°C 150 A IDSM Continuous drain current @VGS=10V TA = 25°C 19 A TA = 70°C 15 A EAS Avalanche energy, single pulsed ② 20 mJ PD Maximum power dissipation TC = 25°C 30 W TC = 100°C 12 W PDSM Maximum power dissipation ③ TA = 25°C 3.6 W TA = 70°C 2.3 W TSTG,TJ Storage and Junction Temperature Range -55 to 150 °C Thermal Characteristics Symbol Parameter Typical Max Unit RθJC Thermal Resistance, Junction-to-Case 4.2 5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 35 42 °C/W

V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 40 45 -- V IDSS Zero Gate Voltage Drain Current(Tj=25℃) VDS=40V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=40V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.1 1.65 2.3 V RDS(on) Drain-Source On-State Resistance ④ VGS=10V, ID=20A -- 6.4 8.3 mΩ (Tj=100℃) -- 7.8 -- mΩ RDS(on) Drain-Source On-State Resistance ④ VGS=4.5V, ID=10A -- 10 13 mΩ Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance VDS=20V,VGS=0V, f=1MHz 550 735 980 pF Coss Output Capacitance 215 285 380 pF Crss Reverse Transfer Capacitance 15 25 60 pF Rg Gate Resistance f=1MHz 0.2 1.7 5 Ω Qg(10V) Total Gate Charge VDS=20V,ID=20A, VGS=10V -- 15 20 nC Qg(4.5V) Total Gate Charge -- 7.6 10 nC Qgs Gate-Source Charge -- 3 4 nC Qgd Gate-Drain Charge -- 3.3 5 nC